Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

Author

Fay, P. ; Jiang, Lu ; Xu, Y. ; Bernstein, G.H. ; Chow, D.H. ; Schulman, J.N. ; Dunlap, H.L. ; De Los, H. J Santos

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN, USA

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1282

Lastpage

1284

Abstract

The integration of InAs/AlSb/GaSb resonant interband tunneling diodes (RITDs) with InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is reported. The integrated devices exhibit nearly identical performance to discrete control devices from DC through microwave frequencies. RITDs with peak current densities of 24.5 kA/cm² and peak voltages of 0.12 V have been demonstrated for devices with 1.2-nm thick AlSb barriers. HEMTs with 0.2-μm gates have been fabricated, and f_ts of 127 GHz and f_max of 183 GHz have been obtained. To the authors´ knowledge, this is the first report of the monolithic integration of RITDs with HEMTs on InP

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high-speed integrated circuits; indium compounds; integrated logic circuits; resonant tunnelling diodes; 0.12 V; 0.2 micron; 1.2 nm; 127 GHz; 183 GHz; HEMTs; InAlAs-InGaAs-InP; InAs-AlSb-GaSb; InP; InP substrate; RITDs; RTD; high electron mobility transistors; high speed logic circuits; logic gates; monolithic integration; resonant interband tunneling diodes; Diodes; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave frequencies; Resonance; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925263

Filename

925263