DocumentCode
1495149
Title
Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation
Author
Martin, Emma ; Nuns, Thierry ; David, Jean-Pierre ; Gilard, Olivier ; Boutillier, Mathieu ; Penquer, Antoine
Author_Institution
CNES, Onera, Toulouse, France
Volume
58
Issue
3
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
891
Lastpage
898
Abstract
Dark current evolution in Charge Coupled Devices (CCD) is experimentally studied with Co-60 and proton irradiations. Linear CCDs are irradiated in various static and dynamic bias conditions. Annealing effects are discussed and on-ground data are compared to in-flight data. Presented results on ionization-induced dark current increase in CCDs have demonstrated the impact of the sensor operational conditions and dose rate, revealing an ELDRS-like effect.
Keywords
annealing; charge-coupled devices; cobalt; proton effects; CCD degradation; Co; Co-60; ELDRS-like effect; annealing; charge coupled devices; dark current evolution; dose rate; dynamic bias conditions; ionization-induced dark current; linear CCD; proton irradiations; static bias conditions; static/dynamic bias effects; Annealing; Charge coupled devices; Current measurement; Dark current; Degradation; Protons; Radiation effects; CCD; TID; dark current; displacement damage dose;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2132739
Filename
5751204
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