Title :
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
Author :
Reinking, D. ; Kammler, M. ; Hoffmann, N. ; Horn-Von Hoegen, M. ; Hofmann, K.R.
Author_Institution :
Inst. fur Halbleitertechnol., Hannover Univ., Germany
fDate :
3/18/1999 12:00:00 AM
Abstract :
The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; elemental semiconductors; epitaxial growth; germanium; integrated circuit technology; semiconductor growth; silicon; CMOS compatible process; CMOSFETs; Ge; Ge p-channel MOSFETs; SME; Si; Si(111) substrates; channel drift mobilities; fabrication; high-mobility PMOSFETs; nonoptimised low temperature process; p-MOSFETs; relaxed Ge layers; surfactant mediated epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990349
