Title :
Type-I Diode Lasers for Spectral Region Above 3 μm
Author :
Belenky, Gregory ; Shterengas, Leon ; Kipshidze, Gela ; Hosoda, Takashi
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
In this paper, we consider the role of carrier confinement in achieving high-power continuous wave (CW) room temperature operation of GaSb-based type-I quantum-well (QW) diode lasers at wavelengths above 3 μm. The use of compressive strain and quinternary barrier materials to confine holes in the active QWs allows the fabrication of 3-μm GaSb-based type-I QW diode lasers operating at 17 °C in the CW mode with output power of 360 mW. We will present the results of characterization of 2.2-μm diode lasers grown on metamorphic virtual substrates. The use of InGaSb virtual substrate makes it possible to fabricate devices with As free QWs. The prospects of using virtual substrates for development of GaSb-based type-I lasers will be discussed.
Keywords :
III-V semiconductors; gallium compounds; integrated optics; optical fabrication; quantum well lasers; GaSb; InGaSb; carrier confinement; compressive strain; high-power continuous wave room temperature operation; laser output power; metamorphic virtual substrates; power 360 mW; quinternary barrier materials; temperature 17 degC; type-I quantum-well diode lasers; wavelength 2.2 mum; wavelength 3 mum; Current measurement; Diode lasers; Measurement by laser beam; Optical waveguides; Semiconductor lasers; Threshold current; Waveguide lasers; GaInSb; GaSb; metamorphic; mid-IR; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2128300
