DocumentCode
1496068
Title
High-Power 1.48- 
m Wafer-Fused Optically Pumped Semiconductor Disk Laser
Author
Lyytikäinen, J. ; Rautiainen, J. ; Sirbu, A. ; Iakovlev, V. ; Laakso, A. ; Ranta, S. ; Tavast, M. ; Kapon, E. ; Okhotnikov, O.G.
Author_Institution
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Volume
23
Issue
13
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
917
Lastpage
919
Abstract
An output power up to 5 W at 1.48-μm wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity diamond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power disk lasers in a wide wavelength range.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; indium compounds; laser cavity resonators; optical pumping; quantum well lasers; AlGaInAs-InP; Bragg reflector; GaAs; GaAs substrate; InP; InP substrate; gain structure surface; heat removal; heterostructure; high-power wafer-fused optical pumping; intracavity diamond heatspreader; laser output power; semiconductor disk laser; wafer fusion technique; wavelength 1.48 mum; Indium phosphide; Laser excitation; Laser fusion; Pump lasers; Vertical cavity surface emitting lasers; Optical pumping; quantum wells; semiconductor lasers; surface-emitting lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2011.2143399
Filename
5751633
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