Title :
Effect of synchrotron X-ray radiation on the channel hot-carrier reliability of reoxidized nitrided silicon dioxide
Author :
Dunn, Gregory J.
Author_Institution :
US Dept. of State, Washington, DC, USA
Abstract :
Channel hot-carrier-induced degradation was studied in reoxidized nitrided oxide n-channel MOSFETs which were exposed to 1-2-keV X-rays from a synchrotron source. It is found that transconductance degradation under high gate bias stress (Vg=1.3 V/sub d/) is enhanced by the X-ray exposure to a lesser degree in reoxidized nitrided oxide (RNO) devices than in conventional oxide devices. This indicates that radiation generates fewer electron traps in RNO than in a conventional oxide.<>
Keywords :
MOS integrated circuits; VLSI; X-ray effects; X-ray lithography; insulated gate field effect transistors; integrated circuit technology; nitridation; oxidation; radiation hardening (electronics); reliability; 1 to 2 keV; 1.3 V; RNO; channel hot carrier induced degradation; channel hot-carrier reliability; high gate bias stress; n-channel MOSFETs; reoxidized nitrided oxide; synchrotron X-ray radiation; transconductance degradation; Annealing; Circuits; Degradation; Electron traps; Fabrication; Hot carrier effects; Hot carriers; Ionizing radiation; Stress; Synchrotron radiation;
Journal_Title :
Electron Device Letters, IEEE
