Title :
Determination of interface state density in small-geometry MOSFETs by high-low-frequency transconductance method
Author :
Chen, Hung-Sheng ; Li, Sheng S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A method for determining the interface state profile in small-geometry MOSFETs operating in the linear region is described. By comparing the measured high- and low-frequency transconductance of the MOSFET, the interface state density is determined. In addition, using a static drain current measurement, the surface potential can be related to the gate bias without knowledge of the doping profile in the channel.<>
Keywords :
MOS integrated circuits; VLSI; insulated gate field effect transistors; interface electron states; high frequency transconductance; high-low-frequency transconductance method; interface state profiling; low-frequency transconductance; small-geometry MOSFETs; static drain current measurement; surface potential; Admittance; Capacitance; Current measurement; Density measurement; Doping profiles; Frequency; Interface states; MOSFETs; Transconductance; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
