Title :
Comments, with reply, on ´A new approach to optimizing the base profile for high-speed bipolar transistors´ by P.J. Van Wijnen and R.D. Gardner
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
The commenter claims that the fundamental approach of P.J. Van Wijnen and R.D. Gardner in the above-mentioned work (see ibid., vol.11, p.149-52, Apr. 1990) has already been proposed in L.J. Varnerin (Proc. IRE, vol.47, p.523-7, Apr. 1959). It is further claimed that the results shown in Varnerin regarding this approach to optimizing the base doping profile for maximum f/sub T/ are more general than those of Van Wijnen and Gardner, and lead to different conclusions regarding the optimum base doping profile. In a rely, the original authors admit they were unaware of the work of Varnerin, and offer some specific responses to the commenter´s points.<>
Keywords :
bipolar transistors; doping profiles; semiconductor doping; base doping profile optimisation; high-speed bipolar transistors; previous work; work of Varnerin; Current measurement; Electric variables measurement; Electron devices; Equations; Gallium arsenide; Impact ionization; Leakage current; MESFETs; Semiconductor diodes; Temperature;
Journal_Title :
Electron Device Letters, IEEE
