DocumentCode
1496910
Title
High-power density SiC MESFETs with multi-recess gate
Author
Deng, X.C. ; Li, Luoqing ; Zhang, Boming ; Mo, J.H. ; Wang, Yannan ; Wang, Yannan ; Li, Z.J.
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume
47
Issue
8
fYear
2011
Firstpage
517
Lastpage
518
Abstract
Silicon carbide (SiC) MESFETs were fabricated by using a standard SiC MESFET structure with the application of the multi-recessed gate in the process. The multi-recessed gate structure is effective in increasing the output power density, due to higher breakdown voltage. A 250 m gate periphery SiC MESFET biased at a drain voltage of 65 V demonstrated a pulsed wave saturated output power of 2.24 W with a linear gain of 8 dB at 2 GHz. RF power output greater than 8.9 W/mm was achieved, showing the potential of these devices for high-power operation.
Keywords
Schottky gate field effect transistors; semiconductor device manufacture; silicon compounds; SiC; breakdown voltage; frequency 2 GHz; gain 8 dB; high-power density SiC MESFET; multirecessed gate structure; output power density; power 2.24 W; silicon carbide; size 250 micron; voltage 65 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.0048
Filename
5751805
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