• DocumentCode
    1497231
  • Title

    AlAsSb-based distributed Bragg reflectors using InAlGaAs as high-index layer

  • Author

    Hall, E. ; Kroemer, H. ; Coldren, L.A.

  • Author_Institution
    Dept. of Mater., California Univ., Santa Barbara, CA, USA
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    3/4/1999 12:00:00 AM
  • Firstpage
    425
  • Lastpage
    427
  • Abstract
    The optical and electrical properties of InAlGaAs/AlAsSb distributed Bragg reflectors for long-wavelength vertical-cavity surface-emitting lasers are reported. This materials combination shows much lower resistances for p-type mirrors compared to AlGaAsSb/AlAsSb mirrors, resulting from a smaller valence band discontinuity
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; quantum well lasers; refractive index; surface emitting lasers; III-V semiconductors; InAlGaAs-AlAsSb; distributed Bragg reflectors; high-index layer; long-wavelength vertical-cavity surface-emitting lasers; p-type mirrors; valence band discontinuity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990293
  • Filename
    757163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1497231