• DocumentCode
    1497967
  • Title

    Nonvolatile semiconductor memory revolutionizing information storage

  • Author

    Lu, Chih-yuan ; Kuan, Howard

  • Author_Institution
    MXIC & Ardentec Corp, Taiwan
  • Volume
    3
  • Issue
    4
  • fYear
    2009
  • fDate
    12/1/2009 12:00:00 AM
  • Firstpage
    4
  • Lastpage
    9
  • Abstract
    (1) NVSM has revolutionized the information-storage technology and has ushered in the mobile electronics era. (2) NVSM has enabled the development of numerous new electronic applications and has penetration rates of over 90% in electronic systems since 2005; it is ubiquitous. (3) Flash memory owns many good attributes for an almost ideal memory. Therefore, it is an inevitable key component in many applications. (4) NAND-based Flash is not only for memory use but is the best solution today for semiconductor digital-mass storage among all other semiconductor choices. Many exotic/emerging technologies are under research for the next-generation candidate, but as of today, none are ready to overtake the floating-gate NVSM- the gap is still quite large.
  • Keywords
    flash memories; information storage; random-access storage; flash memory; information storage; mobile electronics; nonvolatile semiconductor memory; Application software; EPROM; Electronics industry; Flash memory; Nonvolatile memory; PROM; Personal digital assistants; Random access memory; Semiconductor memory; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4510
  • Type

    jour

  • DOI
    10.1109/MNANO.2009.934861
  • Filename
    5284480