Comparison of Scaling of In-Plane and Perpendicular Spin Transfer Switching Technologies by Micromagnetic Simulation

Author

Apalkov, Dmytro ; Watts, Steven ; Driskill-Smith, Alexander ; Chen, Eugene ; Diao, Zhitao ; Nikitin, Vladimir

Author_Institution

Grandis Inc., Milpitas, CA, USA

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

2240

Lastpage

2243

Abstract

Spin transfer torque switching-basis of operation of innovative memory technology-STT-RAM (spin transfer torque memory) has been actively studied in the recent years with two prevalent technologies emerging at fast pace: in-plane and perpendicular. The crucial question for future development is which technology provides better scaling to smaller sizes. The present work provides evaluation of scalability of these two approaches based on micromagnetic modeling.

Keywords

magnetic storage; magnetoelectronics; micromagnetics; random-access storage; switching; in-plane spin transfer switching technology; innovative memory technology; micromagnetic modeling; micromagnetic simulation; perpendicular spin transfer switching technology; spin transfer torque random access memory; Anisotropic magnetoresistance; Current density; Damping; Magnetization; Micromagnetics; Scalability; Shape; Thermal stability; Torque; Voltage; Magnetic tunneling junction; spin transfer torque random access memory (STT-RAM); spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2041330

Filename

5467399