Title :
Design of single-gated multiple-mode power semiconductor devices
Author :
Stark, B.H. ; Palmer, P.R.
Author_Institution :
Dept. of Eng. Sci., Oxford Univ., UK
fDate :
4/1/2001 12:00:00 AM
Abstract :
A new method is used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. The design of single-gated devices with multiple modes and aspects of their switching behaviour are discussed
Keywords :
insulated gate bipolar transistors; power semiconductor devices; thyristors; IGBT switching; multiple modes; single-gated multiple-mode power semiconductor devices; switching behaviour; thyristor modes; thyristor on-state characteristics;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20010167
