Title :
Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor
Author :
Spulber, O. ; De Souza, M.M. ; Sweet, M. ; Bose, J. V Subhas Chandra ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technols. Res. Centre, De Montfort Univ., Leicester, UK
fDate :
4/1/2001 12:00:00 AM
Abstract :
A novel 1.2 kV, trench-planar insulated gate bipolar transistor (TPIGBT) is analysed in detail using numerical modelling techniques to evaluate the influence of the injection-enhancement (IE) effect. A major innovative aspect of the device is that the trench and the planar gate oxide dimensions can be independently optimised to achieve superior performance. Furthermore, it is shown that the low conduction losses of the TPIGBT are a direct consequence of the IE effect. Results indicate a good trade-off in terms of on-state and turn-off losses in comparison to the planar and trench gated IGBTs
Keywords :
insulated gate bipolar transistors; losses; power transistors; semiconductor device models; 1.2 kV; conduction losses; injection-enhancement effect; numerical modelling techniques; on-state losses; planar gate oxide dimensions; trench dimensions; trench-planar insulated gate bipolar transistor; turn-off losses;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20010294
