DocumentCode
1498166
Title
Electromechanical evaluation of a bondless pressure contact IGBT
Author
Wakema, F.J. ; Lockwood, G.W.
Author_Institution
Westcode Semiconds. Ltd., Chippenham, UK
Volume
148
Issue
2
fYear
2001
fDate
4/1/2001 12:00:00 AM
Firstpage
89
Lastpage
93
Abstract
The paper presents some of the electromechanical design strategies used in the implementation of a completely bond free, pressure contacted IGBT with integral anti-parallel diode. The mechanical, thermal and electrical properties of a pressure contacted IGBT are compared to those exhibited by substrate mounted devices. These differences indicate that the bondless pressure contact IGBT offers the potential of higher reliability and other exploitable advantages in certain applications
Keywords
insulated gate bipolar transistors; power semiconductor switches; semiconductor device packaging; semiconductor device reliability; bondless pressure contact IGBT; electrical properties; electromechanical design strategies; integral anti-parallel diode; reliability; substrate mounted devices; thermal properties;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20010295
Filename
926415
Link To Document