D-Band Micromachined Silicon Rectangular Waveguide Filter

Author

Zhao, X.H. ; Bao, J.F. ; Shan, G.C. ; Du, Y.J. ; Zheng, Y.B. ; Wen, Y. ; Shek, C.H.

Author_Institution

Inst. of Electron. Eng., Mianyang, China

Volume

22

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

230

Lastpage

232

Abstract

The 140 GHz silicon micromachined bandpass rectangular waveguide filters are firstly fabricated by the deep reactive ion etching (DRIE) processes for submillimeter wave applications. The filter circuit structure is once-formed using the ICP reactive ion etcher to etch through the full thickness of the silicon wafer, and then bonded together with the two metallized glass covers to form the waveguide cavity. The measured lowest insertion losses are lower than 0.5 dB. The unloaded quality factor can reach 160. It demonstrates a successful and practical way to fabricate these types of waveguide filters.

Keywords

Q-factor; micromachining; rectangular waveguides; silicon; sputter etching; waveguide filters; D-band micromachined silicon rectangular waveguide filter; DRIE process; ICP reactive ion etcher; bandpass rectangular waveguide filter; deep reactive ion etching; filter circuit structure; frequency 140 GHz; insertion losses; metallized glass; quality factor; silicon wafer; submillimeter wave application; waveguide cavity; Etching; Gold; Insertion loss; Iris; Optical waveguides; Rectangular waveguides; Silicon; Micromachining; RF MEMS; microwave filter; rectangular waveguide; terahertz (THz);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2193121

Filename

6185704