Title :
Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber
Author :
Hoo, E. A K ; Woodhead, J. ; David, J.P.R. ; Grey, R. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
1/21/1999 12:00:00 AM
Abstract :
The authors describe the characteristics of a piezoelectric InGaAs/AlGaAs single quantum well laser with saturable absorber. The screening of the piezoelectric field by injected carriers causes the laser to emit to the blue of the absorption edge. At this wavelength the absorber section is strongly absorbing until the onset of lasing leads to absorption saturation and hence to bistability
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; optical saturable absorption; piezoelectric semiconductors; quantum well lasers; III-V semiconductors; InGaAs-AlGaAs; absorption edge; absorption saturation; injected carriers; lasing onset; optical bistability; piezoelectric laser; saturable absorber; single quantum well laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990088
