DocumentCode :
1498847
Title :
Comparison of Electrical Properties and Bias Stability of Double-Gate a-HIZO TFTs According to TFT Structure
Author :
Lee, Young Wook ; Kim, Sun-Jae ; Lee, Soo-Yeon ; Lee, Woo-Geun ; Yoon, Kap-Soo ; Lee, Hyun-Jung ; Oh, Ji-Soo ; Park, Jae-Woo ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
821
Lastpage :
823
Abstract :
We fabricated two types of double-gate amorphous hafnium-indium-zinc oxide thin-film transistors: a back-channel etch (BCE) type and an etch stopper (ES) type. The normalized on-current and field-effect mobility of the BCE type are larger than those of the ES type. Furthermore, when applied with a positive bias stress, stability trends compared for each single-gate device are different according to structures. We suggest that the reason for the different electrical properties and bias stability originates from the ES structure in which some regions under the source/drain electrodes block the top-gate field; thus, there is no carrier accumulation or charge trapping into the dielectric layer.
Keywords :
electric properties; thin film transistors; TFT structure; back-channel etch; bias stability; double-gate a-HIZO TFT; double-gate amorphous hafnium-indium-zinc oxide thin-film transistors; electrical properties; etch stopper; field-effect mobility; positive bias stress; single-gate device; stability trends; Electron traps; Logic gates; Stability analysis; Stress; Thin film transistors; Double gate (DG); hafnium–indium–zinc oxide; oxide thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2190262
Filename :
6186768
Link To Document :
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