DocumentCode :
1499103
Title :
Steady-state thermal uniformity and gas flow patterns in a rapid thermal processing chamber
Author :
Campbell, Stephen A. ; Ahn, K.H. ; Knutson, Karson L. ; Liu, Benjamin Y H ; Leighton, John D.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume :
4
Issue :
1
fYear :
1991
fDate :
2/1/1991 12:00:00 AM
Firstpage :
14
Lastpage :
20
Abstract :
The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady-state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high-thermal-uniformity systems, however, convective cooling does play an important role, approximately equal to that of edge losses
Keywords :
digital simulation; semiconductor technology; ambient composition; convective cooling; edge losses; experimental epitaxial growth rate data; gas flow patterns; high-thermal-uniformity systems; pressure; process conditions; radiant uniformity; rapid thermal processing chamber; rapid thermal processing system; steady-state temperature distribution; substrate heat flow considerations; temperature distributions; Cooling; Fluid flow; Heating; Lamps; Mechanical engineering; Pins; Rapid thermal processing; Steady-state; Substrates; Temperature distribution;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.75859
Filename :
75859
Link To Document :
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