Title :
A Self-Consistent SDD-NEGF Approach for Modelling Magnetic Tunnel Junctions
Author :
Siu, Z.B. ; Jalil, M.B.A. ; Tan, S.G. ; Wang, J.-S.
Author_Institution :
Dept. of Phys., Nat. Univ. of Singapore, Singapore, Singapore
fDate :
6/1/2010 12:00:00 AM
Abstract :
Most contemporary work on magnetic tunnel junctions either consider ballistic quantum transport across the tunneling barrer, for instance via the Non Equilibrium Green´s Function (NEGF) formalism, or treat the tunneling region as a lump resistance connected to bulk metallic leads in the Spin Drift-Diffusion (SDD) approach. The effects of interfacial barriers and central device physics on the spin accumlation in the leads have largely been ignored in most NEGF calculations. In this work we introduce a self consistent approach that combines the NEGF and SDD methods. We calculate the effects of the barrier potential height and spin orbit interaction on the spin injection from a ferromagnet to a semiconductor through the barrier.
Keywords :
Green´s function methods; SCF calculations; ballistic transport; ferromagnetic materials; interface magnetism; magnetic tunnelling; semiconductor materials; spin dynamics; spin polarised transport; spin-orbit interactions; ballistic quantum transport; barrier potential height; bulk metallic leads; central device physics; ferromagnet; interfacial barriers; lump resistance; magnetic tunnel junctions; nonequilibrium Green´s function formalism; self-consistent SDD-NEGF approach; semiconductor; spin accumlation; spin drift-diffusion approach; spin injection; spin orbit interaction; tunneling barrer; Data engineering; High performance computing; Laboratories; Magnetic materials; Magnetic tunneling; Material storage; Materials science and technology; Physics computing; Polarization; Quantum computing; Magnetic tunnel junctions; non-equilibrium Green´s function; spin diffusion drift;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2044979
