Observation of Suppressed Interdiffusion in FeRh/FePt-Ta Bilayer Thin Films

Author

Jang, Sung-Uk ; Park, Eon Byeong ; Kim, Ji-Hong ; Park, Ki-Hoon ; Lee, Ji Sung ; Kim, Young Keun ; Hyun, Seungmin ; Lee, Hak-Joo ; Kwon, Soon-Ju ; Lee, Hwan-Soo

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

2104

Lastpage

2107

Abstract

FeRh/FePt bilayers on MgO (100) substrates were fabricated by rf-magnetron sputtering, and the magnetic properties and microstructures of the bilayers were studied in terms of Ta addition to the storage layer. Compared to undoped FeRh/FePt bilayers, FeRh/FePt-Ta bilayer films showed improved magnetic properties and lower degree of interdiffusion. The FeRh/FePt-Ta bilayers clearly demonstrated the AFM-FM transition. Reduced interdiffusion by Ta segregation along grain boundaries was speculated to be a possible cause for the observed improvement in magnetic properties when fabricated at high temperature.

Keywords

chemical interdiffusion; ferromagnetic-antiferromagnetic transitions; grain boundaries; iron alloys; magnetic multilayers; magnetic thin films; platinum alloys; rhodium alloys; segregation; sputter deposition; tantalum; FeRh-FePt-Ta; MgO; antiferromagnetic-ferromagnetic transition; bilayer thin films; grain boundaries; high-temperature effects; microstructure; rf-magnetron sputtering; segregation; storage layer; suppressed interdiffusion; Anisotropic magnetoresistance; Laboratories; Magnetic films; Magnetic materials; Magnetic properties; Materials science and technology; Microstructure; Substrates; Temperature; Transistors; FePt-Ta; FeRh/FePt-Ta bilayer; ferromagnetic and antiferromagentic transition; interdiffusion;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2042148

Filename

5467680