Title :
Ge-Si/Si infra-red, zone-folded superlattice detectors
Author :
Pearsall, T.P. ; Beam, E.A. ; Temkin, H. ; Bean, J.C.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
5/26/1988 12:00:00 AM
Abstract :
Superlattice photovoltaic waveguide detectors have been fabricated and tested with a strained-layer superlattice active region of four alternating atomic monolayers of Ge and Si. The infra-red spectral response extends to 1·4 μm. The peak of the optical response is shifted toward the visible relative to Ge-Si alloy detectors of a similar average composition
Keywords :
Ge-Si alloys; elemental semiconductors; infrared detectors; photodiodes; semiconductor superlattices; silicon; 1.4 micron; GeSi-Si; IR detectors; MBE; alternating atomic monolayers; infrared type; optical response; photodiodes; photovoltaic waveguide detectors; semiconductor; strained-layer superlattice active region; zone-folded superlattice detectors;
Journal_Title :
Electronics Letters
