Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices

In this work, we address the following question: Where do the resistive switching processes take place in memristive thin-film devices of the single crystalline model material Fe-doped SrTiO₃? We compare resistive switching induced by the tip of the atomic force microscope on the bare thin-film surface with the switching properties observed in memristive devices with Pt top electrode. In order to close the gap between these two approaches, we combine conductive-tip atomic force microscopy with a delamination technique to remove the top electrode of Fe-doped SrTiO₃ metal-insulator-metal (MIM) structures to gain insight into the active switching interface with nanoscale lateral resolution. This enables us to prove the coexistence of a filamentary and area-dependent switching process with opposite switching polarities in the same sample. The spatially resolved analysis by transmission electron microscopy and photoelectron spectromicroscopy gives us some hints that the two switching types take place in device regions with different defect density and significant stoichiometry difference.