Analytical loss model of low voltage enhancement mode GaN HEMTs

Author

Wang Kangping ; Yang Xu ; Zeng Xiangjun ; Yu Xiaoling ; Li Hongchang ; Guo Yixuan ; Gao Bing ; Ma Huan

Author_Institution

State Key Lab. of Electr. Insulation & Power Equip., Xi´an Jiaotong Univ., Xi´an, China

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

100

Lastpage

105

Abstract

An analytical model is proposed in this paper to calculate the switching loss of low voltage enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The switching process is illustrated in detail. The switching loss is obtained by solving the equivalent circuits during the switching transition. A good agreement is shown between the analytical model and Spice simulation results. In addition, in order to accurately measure the current transition waveform, a novel current measuring method based on magnetic coupling is proposed. Finally, a buck converter is designed to validate the accuracy of the proposed model.

Keywords

III-V semiconductors; electric current measurement; equivalent circuits; gallium compounds; high electron mobility transistors; switching convertors; GaN; HEMT; Spice simulation; analytical loss model; analytical model; buck converter; current transition waveform measurement; equivalent circuits; gallium nitride high electron mobility transistors; low voltage enhancement mode; magnetic coupling; switching loss calculation; switching transition; Analytical models; Capacitance; Current measurement; Inductance; Logic gates; Switching loss; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953381

Filename

6953381