Analysis of novel SGOI-TFET with record low subthreshold swing (SS) and high Ion/Ioff ratio

This paper presents a novel 30 nm n-channel asymmetric Silicon Germanium-on-Insulator (SGOI) based Tunnel Field Effect transistor using Non-Local Band-to-Band tunneling model that shows the good switching characteristic. Here, we analyzed four different models such as Simple Model, Schenk Model, Hurkx Model and Non-Local Model. Germanium is used as the source because of low band gap material and Silicon Germanium on Insulator (SGOI) which increases the speed of the transistors by straining the crystal lattice, resulting in improved electron mobility and higher drive currents. TCAD Simulation is made which shows the result with the record high I_on/I_off ratio of 3.4×10⁹ and the steepest point subthreshold swing of 37mV/decade. This work also shows that the Miller capacitance is very small in case of a non-local BTBT model than all other models. Effect of gate dielectric on the subthreshold performance of the SGOI-TFET is also evaluated using the non-local BTBT model and it is found that the ON current is enhanced with increased relative permittivity of the gate dielectrics.