Unique extraction of substrate parameters of common-source MOSFETs

Author

Kim, Chung-Hwan ; Kim, Cheon Soo ; Yu, Hyun Kyu ; Nam, Kee Soo

Author_Institution

Micro Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

9

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

108

Lastpage

110

Abstract

The unique extraction method of small-signal substrate parameters for MOSFETs is proposed. To cover the output resistance reduction at microwave frequency range, drain substrate resistance as well as drain junction capacitance is considered. Parasitic series resistances are extracted at the zero-gate-bias cold-FET condition using the asymptotic behavior of Z-parameters. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction

Keywords

MOSFET; S-parameters; capacitance; electric resistance; equivalent circuits; microwave field effect transistors; semiconductor device models; Z-parameters; asymptotic behavior; common-source MOSFET; drain junction capacitance; drain substrate resistance; field effect transistors; microwave frequency range; modeled S-parameters; output resistance reduction; parasitic series resistances extraction; small-signal substrate parameters; substrate parameters extraction; zero-gate-bias cold-FET condition; CMOS process; Electrical resistance measurement; Equivalent circuits; MOSFET circuits; Microwave frequencies; Microwave transistors; Parameter extraction; Parasitic capacitance; Radio frequency; Semiconductor device modeling;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.761676

Filename

761676