DocumentCode :
1502941
Title :
A Deep UV Sensitive 
TFT
Author :
Chiu, C.J. ; Weng, W.Y. ; Chang, S.J. ; Chang, Sheng-Po ; Chang, T.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
11
Issue :
11
fYear :
2011
Firstpage :
2902
Lastpage :
2905
Abstract :
The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2/Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5×10-9 A to 5.56×10-5 A , as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0×106 for the fabricated Ta2O5/a-IGZO TFT.
Keywords :
carrier mobility; photodetectors; tantalum compounds; thin film transistors; Ta2O5; carrier mobility; deep UV sensitive TFT; gate dielectric; subthreshold swing; thin-film-transistor; threshold voltage; Current measurement; Dielectric measurements; Electrical engineering; Logic gates; Microelectronics; Photodetectors; Thin film transistors; ${rm Ta}_{2}{rm O}_{5}$ ; a-IGZO; solar-blind ultraviolet (UV) photodetctor; thin-film-transistor (TFT);
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2011.2146770
Filename :
5755165
Link To Document :
