Memristive Behavior in Thin Anodic Titania

Author

Miller, Kyle ; Nalwa, Kanwar S. ; Bergerud, Amy ; Neihart, Nathan M. ; Chaudhary, Sumit

Author_Institution

Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

737

Lastpage

739

Abstract

A common material in creating memristors is titanium dioxide (TiO₂), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO₂ films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO₂ interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.

Keywords

anodisation; atomic layer deposition; memristors; sol-gel processing; sputtering; thin film resistors; titanium compounds; Ti-TiO₂; atomic layer deposition; electrochemical titanium anodization; memristive behavior; memristive switching; memristors; metal-oxide interface; nonannealed films; oxygen vacancies; sol-gel process; sputtering; thin anodic titania; titanium dioxide; Electrochemical anodization; memristor; titanium dioxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2049092

Filename

5473038