• DocumentCode
    1503387
  • Title

    Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

  • Author

    Zhang, Zhen ; Pagette, F. ; D´Emic, C. ; Yang, B. ; Lavoie, C. ; Zhu, Y. ; Hopstaken, M. ; Maurer, S. ; Murray, C. ; Guillorn, M. ; Klaus, D. ; Bucchignano, J. ; Bruley, J. ; Ott, J. ; Pyzyna, A. ; Newbury, J. ; Song, W. ; Chhabra, V. ; Zuo, G. ; Lee, K.-

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    31
  • Issue
    7
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    731
  • Lastpage
    733
  • Abstract
    An extremely low contact resistivity of 6-7 × 10-9 Ω·cm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics.
  • Keywords
    Schottky barriers; contact resistance; diffusion barriers; Ni0.9Pt0.1Si; Schottky barrier engineering; contact resistivities; diffusion sources; dopant segregation; sharp reduction; silicides; Contact resistivity; NiPtSi; Schottky barrier lowering; dopant segregation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2048992
  • Filename
    5473039
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1503387