Title :
An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz
Author :
Chen, Shen-Whan ; Aina, Olaleye ; Li, Weiqi ; Phelps, Lee ; Lee, Tim
Author_Institution :
IC Bus. Unit, Millimeter IC Product, Clarksburg, MD, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
In this paper, the authors report an approach for constructing scalable small-signal models for interdigitated power pseudomorphic high-electron-mobility transistors (P-HEMTs). By using cold-FET and Yang-Long measurement, as well as direct extraction procedures, scaling rules for extrinsic components were established that allow accurate models over a broad frequency range. These models have been used to design ultrawide-band monolithic microwave integrated circuits (MMICs) up to 50 GHz
Keywords :
microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; semiconductor device models; 50 GHz; Yang-Long measurement; cold-FET measurement; direct extraction; interdigitated power P-HEMT; pseudomorphic high-electron-mobility transistor; scaling rule; small-signal model; ultrawide-band MMIC design; Doping; Equivalent circuits; Feeds; HEMTs; Indium gallium arsenide; Integrated circuit modeling; Low-noise amplifiers; MMICs; Molecular beam epitaxial growth; PHEMTs;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
