Title :
Picosecond lifetime measurement in semiconductor by optoelectronic autocorrelation
Author :
Grigoras, Kestutis ; Krotkus, A. ; Deringas, A.
Author_Institution :
Semicond. Phys. Inst., Acad. of Sci., Vilnius, Lithuania SSR, USSR
fDate :
6/6/1991 12:00:00 AM
Abstract :
A novel optoelectronic autocorrelation technique for measuring picosecond lifetimes in semiconductors is described. The technique is based on the nonlinearity of the photovoltage dependence on the optical excitation level. Numerical simulation as well as experimental results for low-temperature epitaxial InGaAs samples are presented.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; photoconductivity; semiconductor epitaxial layers; III-V semiconductors; InGaAs; low-temperature epitaxial layers; nonlinearity; optical excitation level; optoelectronic autocorrelation; photovoltage dependence; picosecond lifetimes; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910637
