Title :
Increasing the Sensitivity of FGMOS Dosimeters by Reading at Higher Temperature
Author :
McNulty, Peter J. ; Poole, Kelvin F.
Author_Institution :
Department of Physics and Astronomy, Clemson University, Clemson, SC, USA
Abstract :
Reading a UV erasable Programmed Read-Only Memory (UVPROM) memory programmed as a dosimeter at a higher temperature lowers the absorbed dose per bit-flip. This exposes latent measurements of lower absorbed doses, thus extending the dynamic range of the devices by two or more orders of magnitude.
Keywords :
Arrays; Dynamic range; Logic gates; Sensitivity; Temperature measurement; Temperature sensors; Transistors; Dosimetry; UV erasable Programmed Read-Only Memory (UVPROM) devices; floating gate metal oxide semiconductor (FGMOS) transistors; radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2192288
