Title :
High performance CSTBT with p-type buried layer
Author :
Zhang, Juyong ; Li, Zuyi ; Zhang, Boming ; Li, Zuyi
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel high performance carrier stored trench bipolar transistor (CSTBT) with a p-type buried layer (PBL-CSTBT) is proposed. The p-type layer of the structure is formed by ion implantation at the bottom of the trench after a partial etching of the Pbase/Ncs layer and the fabrication process is fully compatible with the conventional CSTBT (C-CSTBT) structure. In comparison with the C-CSTBT without a buried layer, the novel structure offers not only high breakdown voltage, but also improved Eoff-Vce(on) trade-off characteristics.
Keywords :
bipolar transistors; etching; ion implantation; Pbase-Ncs layer; carrier stored trench bipolar transistor; conventional CSTBT structure; fabrication process; high breakdown voltage; high performance CSTBT; improved Eoff-Vce(on) trade-off characteristics; ion implantation; p-type buried layer; partial etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0220
