• DocumentCode
    1504618
  • Title

    High performance CSTBT with p-type buried layer

  • Author

    Zhang, Juyong ; Li, Zuyi ; Zhang, Boming ; Li, Zuyi

  • Author_Institution
    State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    48
  • Issue
    9
  • fYear
    2012
  • Firstpage
    525
  • Lastpage
    527
  • Abstract
    A novel high performance carrier stored trench bipolar transistor (CSTBT) with a p-type buried layer (PBL-CSTBT) is proposed. The p-type layer of the structure is formed by ion implantation at the bottom of the trench after a partial etching of the Pbase/Ncs layer and the fabrication process is fully compatible with the conventional CSTBT (C-CSTBT) structure. In comparison with the C-CSTBT without a buried layer, the novel structure offers not only high breakdown voltage, but also improved Eoff-Vce(on) trade-off characteristics.
  • Keywords
    bipolar transistors; etching; ion implantation; Pbase-Ncs layer; carrier stored trench bipolar transistor; conventional CSTBT structure; fabrication process; high breakdown voltage; high performance CSTBT; improved Eoff-Vce(on) trade-off characteristics; ion implantation; p-type buried layer; partial etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0220
  • Filename
    6190850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1504618