Robustness aanalysis of E/D-mode InAlN/GaN HFET inverters

This article addresses an overview of design procedure of digital inverters employing heterostructure field-effect transistors (HFETs) based on InAlN/GaN material structure. InAlN/GaN HFETs are well-known for their high frequency, high power properties and their ability to withstand very harsh environmental effects. These attributes predestine their use in a wide range of applications. However, the fabrication process is currently not that mature and reliable as it is in the case of material systems based on Si, GaAs or InP. Moreover, the unit cost of HFET device is still very high if compared to other processes and available materials. In this paper, we address the design of a basic logic gate. Due to technological imperfections and physical constraints, DC properties of depletion and resistive load based inverters are investigated in details.