Title :
340 GHz Integrated Receiver in 250 nm InP DHBT Technology
Author :
Yan, Yu ; Karandikar, Yogesh B. ; Gunnarsson, Sten E. ; Urteaga, Miguel ; Pierson, Richard ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
5/1/2012 12:00:00 AM
Abstract :
A 340 GHz integrated receiver based on a 250 nm InP DHBT technology is presented in this paper. It consists of a 2 × 2 differential patch array antenna, a sub-harmonically pumped Gilbert mixer and an IF buffer amplifier. Performance of the integrated receiver is evaluated by setting up a RF link in the frequency band of 302-338 GHz. At 338 GHz RF and 170 GHz LO, the peak conversion gain of 11.8 and 14.0 dB is achieved with and without antenna, respectively. A double-sideband noise figure of 17 dB at room temperature is obtained from direct noise figure measurement .
Keywords :
buffer circuits; heterojunction bipolar transistors; intermediate-frequency amplifiers; microstrip antenna arrays; radio links; semiconductor device noise; submillimetre wave amplifiers; submillimetre wave mixers; submillimetre wave receivers; submillimetre wave transistors; DHBT technology; buffer amplifier; differential patch array antenna; direct noise figure measurement; double-sideband noise; frequency 170 GHz; frequency 302 GHz to 338 GHz; frequency 340 GHz; integrated receiver; size 250 nm; subharmonically pumped Gilbert mixer; temperature 293 K to 298 K; Antenna measurements; Arrays; Indium phosphide; Mixers; Radio frequency; Receivers; Transistors; 340 GHz; Gilbert cell mixer; InP double-heterojunction transistor (DHBT); differential amplifier; differential patch antenna; down-converter; receiver; sub-harmonic mixer; sub-millimeter wave; terahertz (THz); terahertz monolithic integrated circuits (TMICs);
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2012.2189912
