Title :
Radical and electron densities in a high plasma density-chemical vapor deposition reactor from a three-dimensional simulation
Author :
Keiter, Eric R. ; Kushner, Mark J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
2/1/1999 12:00:00 AM
Abstract :
High plasma density chemical vapor deposition (HPD-CVD) is being developed for producing interlevel dielectrics in microelectronics fabrication. We present images of radical and electron densities in an Ar/SiH4 HPD-CVD inductively coupled reactor produced by a three-dimensional equipment model. The silane feedstock and silyl (SiH 3) radicals are rapidly dissociated, resulting is densities which are maximum near the nozzles. The silylene (SiH2) radicals, the most fragmented species included in the simulation, are the most uniformly distributed
Keywords :
argon; electron density; free radicals; plasma CVD; plasma chemistry; plasma density; plasma diagnostics; plasma simulation; silicon compounds; Ar-SiH4; Ar/SiH4; dissociation; electron densities; fragmented species; high plasma density chemical vapor deposition; high plasma density-chemical vapor deposition reactor; inductively coupled reactor; interlevel dielectrics; microelectronics fabrication; nozzles; radical densities; silane feedstock; silyl radicals; silylene radicals; three-dimensional equipment model; three-dimensional simulation; uniformly distributed radicals; Argon; Chemical vapor deposition; Electrons; Inductors; Plasma chemistry; Plasma density; Plasma materials processing; Plasma simulation; Plasma temperature; Substrates;
Journal_Title :
Plasma Science, IEEE Transactions on
