Title :
Wafer charging in process equipment and its relationship to GMR heads charging damage
Author_Institution :
Wafer Charging Monitors Inc., Woodside, CA, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
Significant know-how and understanding of device charging damage in processing equipment exists in complementary metal oxide semiconductor (CMOS) integrated circuit (IC) manufacturing. This paper introduces the basic charging mechanisms responsible for gate oxide damage in CMOS ICs, illustrates these mechanisms with examples of measurements obtained in contemporary IC processing equipment, and shows how this knowledge could be applied to the control of charging damage in GMR heads wafer processing. A wafer charging characterization method successfully used by integrated circuit and equipment manufacturers to quantify wafer charging in process equipment is also described
Keywords :
giant magnetoresistance; magnetic heads; magnetoresistive devices; surface charging; GMR heads; characterization method; charging damage; process equipment; processing equipment; wafer charging; wafer processing; CMOS integrated circuits; CMOS process; Electrodes; Insulation; Integrated circuit manufacture; Integrated circuit measurements; Magnetic heads; Manufacturing processes; Semiconductor device manufacture; Surface charging;
Journal_Title :
Electronics Packaging Manufacturing, IEEE Transactions on
DOI :
10.1109/6104.930956
