A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels

Author

Kuo, Chia-Hao ; Lin, Horng-Chih ; Lee, I. -Che ; Cheng, Huang-Chung ; Huang, Tiao-Yuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

833

Lastpage

835

Abstract

A novel complementary metal-oxide-semiconductor inverter with poly-Si nanowire channels is proposed and demonstrated in this letter. The scheme employs a clever tilted-angle implant process in the fabrication; therefore, the formation of the source and drain of both p-channel and n-channel devices requires only one lithographic step. The fabricated n-channel and p-channel field-effect transistors in the inverters show a high ON/OFF current ratio, an acceptable subthreshold swing, and a symmetric driving current, thus enabling the realization of excellent characteristics of the inverters.

Keywords

CMOS integrated circuits; field effect transistors; invertors; lithography; nanowires; CMOS inverter; ON/OFF current ratio; complementary metal-oxide-semiconductor inverter; fabrication; lithographic step; n-channel device; n-channel field-effect transistor; p-channel device; p-channel field-effect transistor; poly-Si nanowire channel; subthreshold swing; symmetric driving current; tilted-angle implant process; CMOS integrated circuits; FETs; Fabrication; Inverters; Logic gates; Nanoscale devices; CMOS inverter; poly-Si; system-on-panel (SoP); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2191585

Filename

6193120