Quenching and Reactivation of Electroluminescence by Charge Trapping and Detrapping in Si-Implanted Silicon Nitride Thin Film

Author

Cen, Zhan Hong ; Chen, T.P. ; Ding, Liang ; Liu, Yang ; Liu, Zhen ; Yang, Ming ; Wong, Jen It ; Goh, W.P. ; Zhu, Fu Rong ; Fung, S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

56

Issue

12

fYear

2009

Firstpage

3212

Lastpage

3217

Abstract

In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120degC or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.

Keywords

annealing; defect states; electroluminescence; electron traps; electron-hole recombination; light emitting devices; radiation quenching; semiconductor thin films; silicon; silicon compounds; Si-implanted SNR thin film; Si-implanted silicon nitride thin film; SiN; charge detrapping; charge trapping; defect states; electroluminescence quenching; electroluminescence reactivation; forward bias; light-emitting devices; low-temperature annealing; radiative recombination; reverse gate bias; temperature 120 C; Annealing; Electroluminescence; Electroluminescent devices; Ion implantation; Materials science and technology; Semiconductor thin films; Shape; Silicon; Thin film devices; Transistors; Charge trapping; Si-implanted silicon nitride; electroluminescence quenching; reactivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2033009

Filename

5291779