A 69–81 GHz power amplifier using 90nm CMOS technology

Author

Jeng-Han Tsai ; Ruei-An Chang ; Ji-Yang Lin

Author_Institution

Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

77

Lastpage

79

Abstract

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (P_sat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum P_sat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP_1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

Keywords

integrated circuit design; low-power electronics; millimetre wave amplifiers; network analysis; power amplifiers; wideband amplifiers; CMOS technology; E-band radio applications; PAE; TSMC 1P9M CMOS low power process; broadband power amplifier; compression point; frequency 69 GHz to 81 GHz; peak power added efficiency; saturation power; size 90 nm; wideband power matching topology; Broadband communication; CMOS integrated circuits; Gain; Power amplifiers; Power generation; Power measurement; Wideband; CMOS; E-band; millimeter-wave (MMW); power amplifier (PA);

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828515

Filename

6828515