DocumentCode :
15074
Title :
High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
Author :
Hsiao-Hsuan Hsu ; Chun-Yen Chang ; Chun-Hu Cheng ; Shan-Haw Chiou ; Chiung-Hui Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
35
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
87
Lastpage :
89
Abstract :
We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of . Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6×10-11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.
Keywords :
gallium compounds; indium compounds; thin film transistors; titanium; zinc compounds; InGaZnO:Ti; TFT; high mobility bilayer metal-oxide thin film transistors; high resolution display; thickness modulation; Dielectrics; Logic gates; Modulation; Performance evaluation; Thin film transistors; Threshold voltage; ${rm TiO}_{2}$; gettering; indium–gallium–zinc oxide (IGZO); mobility; thin-film transistor (TFT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2290707
Filename :
6679240
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=15074
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