DocumentCode
1507447
Title
Mirror passivation of InGaAs lasers
Author
Dutta, N.K. ; Hobson, W.S. ; Zydzik, G.J. ; de Jong, J.F. ; Parayanthal, P. ; Passlack, M. ; Chakrabarti, U.K.
Author_Institution
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Volume
33
Issue
3
fYear
1997
fDate
1/30/1997 12:00:00 AM
Firstpage
213
Lastpage
214
Abstract
The authors report a mirror passivation technique for high power 980 nm lasers. The technique involves depositing a film of gallium oxide on the facet immediately after facet cleaving. Photoluminescence measurements show that the GaAs surface covered with in situ deposited gallium oxide has two orders of magnitude higher luminescence than that for bare GaAs surface. Lasers with good aging characteristics have been fabricated
Keywords
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser mirrors; optical fabrication; passivation; protective coatings; semiconductor lasers; vacuum deposition; waveguide lasers; 980 nm; Ga2O3-GaAs; GaAs; GaAs surface; InGaAs; InGaAs lasers; aging characteristics; facet cleaving; facet coating; facet optical damage prevention; film deposition; high power lasers; luminescence; mirror passivation technique; photoluminescence measurement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970125
Filename
575930
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