DocumentCode
1507608
Title
AlGaN/GaN HEMTs grown on SiC substrates
Author
Binari, S.C. ; Redwing, J.M. ; Kelner, G. ; Kruppa, W.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
33
Issue
3
fYear
1997
fDate
1/30/1997 12:00:00 AM
Firstpage
242
Lastpage
243
Abstract
The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An f T of 6 GHz and an fmax of 11 GHz were measured for 1 μm gate length devices
Keywords
III-V semiconductors; aluminium compounds; characteristics measurement; electron mobility; gallium compounds; power HEMT; 1 micron; 11 GHz; 6 GHz; AlGaN-GaN; HEMTs; SiC; gate breakdown voltage; gate length; hard pinch-off; nearly ideal subthreshold characteristics; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970122
Filename
575959
Link To Document