DocumentCode :
1507896
Title :
Influence of holes on neutral trap generation
Author :
Sakakibara, Kiyohiko ; Ajika, Natsuo ; Miyoshi, Hirokazu
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
44
Issue :
12
fYear :
1997
fDate :
12/1/1997 12:00:00 AM
Firstpage :
2274
Lastpage :
2280
Abstract :
Using a newly proposed method for estimating the neutral trap density, generation characteristics of the neutral trap during various stress types have been investigated. From the analysis of the trap-generation kinetics, two types of trap generation closely related to holes have been identified. At the first stage of stress application, holes interact with the pre-existing structural origins of the neutral traps, then the neutral traps are generated. Influence of hole energy on this type of trap generation is also identified. After that, as holes pass, they also create the structural origins of the traps. The holes interact with these structural origins and the neutral traps are generated as a secondary effect. Thus, the increase in the neutral trap density shows up clearly with increase in the hole fluence. The stress-strength dependence of the increase in the neutral trap density can also be interpreted in terms of the influence of hole energy on the trap generation
Keywords :
MOSFET; hole traps; semiconductor-insulator boundaries; Si-SiO2; generation characteristics; hole energy; hole fluence; neutral trap density estimation; neutral trap generation; secondary effect; stress application; stress-strength dependence; stressed oxide films; structural origins; trap-generation kinetics; Character generation; Degradation; Electric breakdown; Electron traps; Kinetic theory; Leakage current; MOSFETs; Stress; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.644651
Filename :
644651
Link To Document :
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