Distortion in broad-band gallium arsenide MESFET control and switch circuits

Author

Caverly, Robert H.

Author_Institution

Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA, USA

Volume

39

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

713

Lastpage

717

Abstract

The author analyzes the nonlinear mechanisms of the MESFET in its passive control mode of operation and equations are developed that allow designers to predict second- and third-order harmonic and intermodulation products in the conducting state MESFET. The analytic expressions are verified by experimental data. The discussion is based on a lumped element equivalent circuit model and is limited to applications where the MESFET is operating in its conducting state. In switch circuits, the analysis indicates that distortion may be reduced by the use of MESFETs with pinchoff voltages in the 2-3-V range and with large open channel current capacities. In attenuators, the analysis shows extreme variations in the level of distortion over a relatively narrow range of attenuation levels. Distortion in the case of the reflective attenuator may be reduced by the use of MESFETs with small open channel current capabilities

Keywords

III-V semiconductors; Schottky gate field effect transistors; attenuators; electric distortion; equivalent circuits; field effect transistor circuits; gallium arsenide; harmonics; intermodulation; semiconductor device models; semiconductor switches; solid-state microwave circuits; solid-state microwave devices; switching circuits; 2 to 3 V; GaAs; IMD; MESFET; RF type; attenuation; broadband type; conducting state; distortion reduction; intermodulation products; lumped element equivalent circuit model; microwave type; nonlinear mechanisms; open channel current capacities; passive control mode; pinchoff voltages; reflective attenuator; second-order harmonies; third-order harmonic; wideband type; Attenuators; Circuit analysis; Equivalent circuits; Gallium arsenide; Harmonic analysis; MESFET circuits; Nonlinear equations; Switches; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.76437

Filename

76437