Title :
Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs
Author :
Ling, C.H. ; Goh, Y.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fDate :
12/1/1997 12:00:00 AM
Abstract :
A linear relation exists between the maximum forward gated-diode current Id and the corresponding maximum charge pumping current Icp, in a hot-carrier stressed pMOSFET. Id peak is further observed to shift by an amount equal to the shift in the rising edge of Icp. A close correspondence between the two currents is demonstrated
Keywords :
MOSFET; hot carriers; leakage currents; charge pumping currents; forward gated-diode current; hot-carrier stressed PMOSFETs; p-channel MOSFET; Charge pumps; Degradation; Electron traps; Hot carriers; MOSFET circuits; Pulse measurements; Silicon; Spontaneous emission; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
