• DocumentCode
    1508637
  • Title

    Thickness dependence of tunneling magneto-resistance effect in granular Fe-Al2O3 films

  • Author

    Huang, Y.H. ; Hsu, J.H. ; Chen, J.W.

  • Author_Institution
    Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    33
  • Issue
    5
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    3556
  • Lastpage
    3558
  • Abstract
    The magneto-transport properties of the granular Fe0.5(Al2O3)0.5 solids with various film thickness have been investigated. The temperature dependence of the resistivity shows that all samples follow a tunneling type equation ρ(T)=ρ0exp(T0/T)1α/ with ρ≈0.1~1 Ωcm at 300 K and α=2. The results of magneto-resistance at 300 K indicate that the value is about 4.5% for thick films. It increases slowly with decreasing film thickness. At about 150 nm, a peak value of TMR is found, which is determined to be 5%. Then TMR drops sharply with further reducing film thickness. It becomes only 3% at t=20 nm. At low temperatures, the TMR effect becomes larger and shows similar thickness dependence. However, the values of T 0 that relate to the geometry of the tunneling barrier show behavior of opposite thickness dependence. A small T0 is associated with a large TMR effect. In this report, the correlation of the film microstructure and the TMR effect are discussed in details
  • Keywords
    alumina; discontinuous metallic thin films; iron compounds; magnetic thin films; magnetoresistance; tunnelling; 150 nm; 300 K; Fe-Al2O3; Fe0.5(Al2O3)0.5; granular Fe-Al2O3 films; resistivity; tunneling magneto-resistance effect; Conductivity; Equations; Geometry; Iron; Magnetic properties; Microstructure; Solids; Temperature dependence; Thick films; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.619496
  • Filename
    619496