• DocumentCode
    1510898
  • Title

    DC and microwave characteristics of modulation doped Ga0.47 In0.53As/InP HFET

  • Author

    Shahar, A. ; Feuer, M.D. ; Koren, U. ; Miller, B.I.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    24
  • Issue
    11
  • fYear
    1988
  • fDate
    5/26/1988 12:00:00 AM
  • Firstpage
    702
  • Lastpage
    703
  • Abstract
    The DC and microwave performance of modulation doped GaInAs/InP HFETs (heterostructure FET), grown by atmospheric pressure organometallic vapour phase epitaxy is reported. An extrinsic transconductance of 300 mS/mm and a best value of the cutoff frequency, Fr=14.1 GHz in a 1.5 μm gate device was measured at room temperature. Improved performance of the Schottky gate device is obtained using an Au gate on the InP/GaInAs heterostructure layers. A low access resistance of 3 Ωmm is obtained using a self-aligned technique with high conductivity n+-GaInAs top layers
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; vapour phase epitaxial growth; 1.5 micron; 14.1 GHz; 300 mS; Au gate; Au-InP-Ga0.47In0.53As; DC characteristics; HEMT; III-V semiconductors; MESFET; MODFET; OMVPE; Schottky gate device; atmospheric pressure MOCVD; cutoff frequency; extrinsic transconductance; heterostructure FET; microwave characteristics; modulation doped HFET; organometallic vapour phase epitaxy; self-aligned technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1510898