High-Temperature SiC Power Module Electrical Evaluation Procedure

To take full advantage of silicon carbide semiconductor devices, high-temperature device packaging needs to be developed. This paper describes potential defects from design and fabrication procedures, and presents a systematic electrical evaluation process to detect such defects. This systematic testing procedure can rapidly detect many defects and reduce the risk in high-temperature packaging testing. A multichip module development procedure that uses this testing procedure is also presented and demonstrated with an example.