DocumentCode :
1512369
Title :
Dependence of intersubband absorption on the number of quantum wells: Radiative coupling effects
Author :
Chen, Xin
Author_Institution :
Dept. of Phys., Univ. of Manchester Inst. of Sci. & Technol., UK
Volume :
35
Issue :
6
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
922
Lastpage :
927
Abstract :
On the basis of a microscopic theory, in which the electromagnetic and electronic nonlocalities have been incorporated, dependence of the intersubband absorption on the number of quantum wells (QWs) is studied. Detailed numerical simulations show that changes in the number of wells, the angle of incidence, and the barrier thickness between adjacent wells can significantly modify the radiative coupling among QWs. Consequently, the intersubband absorption spectrum can also be changed
Keywords :
current density; light absorption; semiconductor device models; semiconductor quantum wells; barrier thickness; electromagnetic nonlocalities; electronic nonlocalities; intersubband absorption; intersubband absorption spectrum; microscopic theory; quantum well number; radiative coupling; Current density; Electromagnetic coupling; Electromagnetic radiation; Electromagnetic wave absorption; Integrated optics; Nonlinear optics; Optical coupling; Quantum mechanics; Quantum well devices; Ultrafast optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.766835
Filename :
766835
Link To Document :
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